IKW30N65NL5 Datasheet, PDF (10/16 Pages) Infineon Technologies AG – Best-in-Class tradeoff between conduction and switching losses

IKW30N65NL5
LowVCE(sat)seriesfifthgeneration
4.0
Eoff
Eon
3.5
Ets
3.0
2.5
2.0
1.5
1.0
0.5
3.5
Eoff
Eon
Ets
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
10 20 30 40 50 60 70 80 90
RG,GATERESISTANCE[Ω]
Figure 13. Typicalswitchingenergylossesasa
functionofgateresistance
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,IC=30A,dynamictestcircuitin
Figure E)
0.0
25
50
75
100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 14. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=30A,RG(on)=23Ω,RG(off)=10Ω,dynamic
test circuit in Figure E)
3.5
Eoff
Eon
Ets
3.0
16
VCC=130V
VCC=520V
14
12
2.5
10
2.0
8
1.5
6
1.0
4
0.5
2
0.0
200 250 300 350 400 450 500
VCE,COLLECTOR-EMITTERVOLTAGE[V]
0
0 20 40 60 80 100 120 140 160 180
QG,GATECHARGE[nC]
Figure 15. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=150°C,VGE=0/15V,
IC=30A,RG(on)=23Ω,RG(off)=10Ω,dynamic
test circuit in Figure E)
Figure 16. Typicalgatecharge
(IC=30A)
10
Rev.2.1,2014-12-10