IKW30N65NL5 Datasheet, PDF (2/16 Pages) Infineon Technologies AG – Best-in-Class tradeoff between conduction and switching losses

IKW30N65NL5
LowVCE(sat)seriesfifthgeneration
LowV_CE(sat)IGBTinTRENCHSTOP^TM5technologycopackedwithRAPID2
fastandsoftantiparalleldiode

FeaturesandBenefits:
C
LowVCE(sat)L5technologyoffering
•Verylowcollector-emittersaturationvoltageVCEsat
•Best-in-Classtradeoffbetweenconductionandswitchinglosses
•650Vbreakdownvoltage
•LowgatechargeQG
•Maximumjunctiontemperature175°C
•QualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating
•RoHScompliant
•CompleteproductspectrumandPSpicemodels:
http://www.infineon.com/igbt/
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E
Applications:
•Uninterruptiblepowersupplies
•Solarphotovoltaicinverters
•Weldingmachines
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KeyPerformanceandPackageParameters
Type
VCE
IC
VCEsat,Tvj=25°C
IKW30N65NL5
650V 30A
1.05V
Tvjmax
175°C
Marking
K30ENL5
Package
PG-TO247-3
2
Rev.2.1,2014-12-10