IKW30N65NL5 Datasheet, PDF (6/16 Pages) Infineon Technologies AG – Best-in-Class tradeoff between conduction and switching losses

IKW30N65NL5
LowVCE(sat)seriesfifthgeneration
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=25°C,
VR=400V,
IF=30.0A,
diF/dt=1500A/µs
-
59
- ns
- 0.48 - µC
- 18.0 - A
- -2800 - A/µs
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=150°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=150°C,
VCC=400V,IC=30.0A,
VGE=0.0/15.0V,
RG(on)=23.0Ω,RG(off)=10.0Ω,
Lσ=60nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Value
Unit
min. typ. max.
-
54
- ns
-
22
- ns
- 345 - ns
- 169 - ns
- 0.69 - mJ
- 2.18 - mJ
- 2.87 - mJ
DiodeCharacteristic,atTvj=150°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=150°C,
VR=400V,
IF=30.0A,
diF/dt=1500A/µs
-
58
- ns
- 0.65 - µC
- 24.0 - A
- -4970 - A/µs
6
Rev.2.1,2014-12-10