IKW30N65NL5 Datasheet, PDF (11/16 Pages) Infineon Technologies AG – Best-in-Class tradeoff between conduction and switching losses

1E+4
Cies
Coes
Cres
1000
100
IKW30N65NL5
LowVCE(sat)seriesfifthgeneration
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
10
0
5
10
15
20
25
30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
0.001
1E-6
i:
1
2
3
4
5
6
ri[K/W]: 0.0107 0.15506 0.17294 0.29017 0.02714 2.2E-3
τi[s]: 2.0E-5 2.2E-4 2.0E-3 0.01147 0.09256 1.82712
1E-5 1E-4 0.001 0.01 0.1
1
tp,PULSEWIDTH[s]
Figure 18. IGBTtransientthermalimpedance
(D=tp/T)
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
0.001
1E-6
i:
1
2
3
4
5
6
ri[K/W]: 0.031494 0.220947 0.291265 0.366808 0.03663 2.3E-3
τi[s]: 2.5E-5 2.1E-4 1.7E-3 0.010113 0.08082 1.811337
1E-5 1E-4 0.001 0.01 0.1
1
tp,PULSEWIDTH[s]
Figure 19. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
150
Tvj=25°C,IF=30A
140
Tvj=150°C,IF=30A
130
120
110
100
90
80
70
60
50
40
30
500
1000 1500 2000 2500 3000
dIF/dt,DIODECURRENTSLOPE[A/µs]
Figure 20. Typicalreverserecoverytimeasafunction
ofdiodecurrentslope
(VR=400V)
11
Rev.2.1,2014-12-10