TLE9869QXA20_15 Datasheet, PDF (83/122 Pages) Infineon Technologies AG – Microcontroller with LIN and H-Bridge MOSFET Driver for Automotive Applications

29.1.3 Current Consumption
TLE9869QXA20
Electrical Characteristics
Table 19 Electrical Characteristics
V_S = 5.5 V to 28 V, T_j = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Parameter
Symbol
Values
Unit Note / Test Condition
Number
Min. Typ. Max.
Current Consumption @VS pin
Current consumption in I_Vs
Active Mode at pin VS
– 30
35
mA f_sys = 20 MHz
P_1.3.1
no loads on pins, LIN in recessive
state¹⁾
Current consumption in I_VSD
Active Mode at pin VSD
––
40 mA 20 kHz
PWM on Bridge Driver
P_1.3.8
Current consumption in I_SDM
Slow Down Mode
––
30 mA f_sys = 5 MHz; LIN communication P_1.3.6
running; charge pump on (reverse
polarity FET on), external Low
Side FET static on (motor break
mode); VDDEXT on; all other
module set to power down;V_S =
13.5V
Current consumption in I_Sleep
Sleep Mode
– 30 35 µA System in Sleep Mode,
P_1.3.3
microcontroller not powered, Wake
capable via LIN and MON; MON
connected to VS or GND;
GPIOs open (no loads) or
connected to GND:
T_J = -40°C to 85°C;
V_S = 5.5 V to 18V;²⁾
Current consumption in I_{Sleep_exten} –
90
200 µA System in Sleep Mode,
P_1.3.15
Sleep Mode extended _d
microcontroller not powered, Wake
range
capable via LIN and MON; MON
connected to VS or GND;
GPIOs open (no loads) or
connected to GND:
T_J = -40°C to 150°C;
V_S = 5.5 V to 18V;²⁾
Current consumption in I_Sleep
Sleep Mode
––
33 µA System in Sleep Mode,
P_1.3.9
microcontroller not powered, Wake
capable via LIN and MON; MON
connected to VS or GND;
GPIOs open (no loads) or
connected to GND:
T_J = -40°C to 40°C;
V_S = 5.5 V to 18V;²⁾
Data Sheet
83
Rev. 1.0, 2015-04-30