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TLE9869QXA20_15 Datasheet, PDF (80/122 Pages) Infineon Technologies AG – Microcontroller with LIN and H-Bridge MOSFET Driver for Automotive Applications
TLE9869QXA20
Electrical Characteristics
Table 17 Absolute Maximum Ratings1) (cont’d)
Tj = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Parameter
Symbol
Voltage range at charge pump VCPx
pins CP1H, CP1L, CP2H, CP2L,
VCP
Min.
-0.3
Values
Typ. Max.
–
48
Unit
V
Note /
Test Condition
8)
Voltages – GPIOs
Voltage on any port pin
Vin
-0.3 –
VDDP V
VIN
<
V 9)
DDPmax
+0.3
Current at VCP Pin
Max. current at VCP pin
IVCP
Injection Current at GPIOs
Injection current on any port pin
Sum of all injected currents in
Normal Mode
IGPIONM
IGPIOAM_sum
Sum of all injected currents in IGPIOPD_sum
Power Down Mode (Stop Mode)
Sum of all injected currents in
Sleep Mode
Other Voltages
IGPIOSleep_su
m
-15 –
-5 –
-50 –
-5000 –
-5 –
–
mA –
5
mA 10)
50
mA 10)
50
µA 10)
5
mA 10)
Input voltage VAREF
VAREF
-0.3 –
VDDP V
–
+0.3
Input voltage
OP1, OP2
VOAI
-7 –
7
V–
Temperatures
Junction temperature
Tj
-40 –
150 °C –
Storage temperature
Tstg
-55 –
150 °C –
ESD Susceptibility
ESD susceptibility
all pins
VESD1
-2 –
2
kV HBM 11)
ESD susceptibility
pins MON, VS, VSD,
VESD2
-4 –
4
kV HBM 12)
VBAT_SENSE vs.GND
ESD susceptibility
pins LIN vs. GND_LIN
VESD3
-6 –
6
kV HBM 11)
ESD susceptibility CDM
all pins vs. GND
VESD_CDM1 -500 –
500 V
13)
ESD susceptibility CDM
VESD_CDM2 -750 –
pins 1, 12, 13, 24, 25, 36, 37, 48
750 V
13)
(corner pins) vs. GND
1) Not subject to production test, specified by design.
2) Conditions and min. value is derived from application condition for reverse polarity event.
Number
P_1.1.15
P_1.1.16
P_1.1.35
P_1.1.34
P_1.1.30
P_1.1.36
P_1.1.37
P_1.1.17
P_1.1.23
P_1.1.18
P_1.1.19
P_1.1.20
P_1.1.21
P_1.1.22
P_1.1.28
P_1.1.43
Data Sheet
80
Rev. 1.0, 2015-04-30