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TLE9869QXA20_15 Datasheet, PDF (79/122 Pages) Infineon Technologies AG – Microcontroller with LIN and H-Bridge MOSFET Driver for Automotive Applications
TLE9869QXA20
Electrical Characteristics
29
Electrical Characteristics
This chapter includes all relevant electrical characteristics of the product TLE9869QXA20.
29.1
General Characteristics
29.1.1 Absolute Maximum Ratings
Table 17 Absolute Maximum Ratings1)
Tj = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Parameter
Symbol
Values
Unit Note /
Min. Typ. Max.
Test Condition
Number
Voltages – Supply Pins
Supply voltage – VS
Supply voltage – VSD
Supply voltage – VSD
Voltage range – VDDP
Voltage range – VDDP
VS
-0.3 –
VSD
-0.3 –
VSD_max_exten -2.8 –
d
VDDP
-0.3 –
VDDP_max_ext -0.3 –
end
Voltage range – VDDEXT
Voltage range – VDDEXT
VDDEXT
-0.3 –
VDDEXT_max_ -0.3 –
extend
Voltage range – VDDC
VDDC
Voltages – High Voltage Pins
-0.3 –
Battery voltage VBAT_SENSE VBAT_SENSE -28 –
Input voltage at LIN
VLIN
-28 –
Input voltage at MON
VMON_maxrate -28
–
Input voltage at VDH
VVDH_maxrate -2.8 –
Voltage range at GHx
VGH
-6.0 –
Voltage range at GHx vs. SHx VGHvsSH
14 16
Voltage range at SHx
VSH
-6.0 –
Voltage range at GLx
VGL
-6.0 –
Voltage range at GLx vs. SL
VGLvsSL
14 16
40 V
48 V
48 V
5.5 V
7
V
5.5 V
7
V
1.6 V
40 V
40 V
40 V
40 V
48 V
19 V
48 V
48 V
19 V
Load dump
P_1.1.1
–
P_1.1.2
Series resistor RVSD = P_1.1.32
2.2 Ω, t = 8 ms 2)
–
P_1.1.3
In case of voltage
transients on VS with
dVS/dt ≤ 1V/µs;
duration: t ≤ 150µs;
CVDDP ≤ 570 nF
–
P_1.1.41
P_1.1.4
In case of voltage
transients on VS with
dVS/dt ≤ 1V/µs;
duration: t ≤ 150µs;
CVDDEXT ≤ 570 nF
–
P_1.1.42
P_1.1.5
3)
P_1.1.6
–
P_1.1.7
4)
P_1.1.8
5)
P_1.1.38
6)
P_1.1.9
–
P_1.1.44
–
P_1.1.11
7)–
P_1.1.13
–
P_1.1.45
Data Sheet
79
Rev. 1.0, 2015-04-30