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| SGW50N60HS_09 Datasheet, PDF (8/11 Pages) Infineon Technologies AG – High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation | |||
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SGW50N60HS
15V
12V
120V
480V
9V
6V
3V
0V
0nC 50nC 100nC 150nC 200nC 250nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC=50 A)
Ciss
1nF
100pF
Coss
Crss
0V
10V
20V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
15µs
10µs
5µs
0µs
10V
11V
12V
13V
14V
VGE, GATE-EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C)
700A
600A
500A
400A
300A
200A
100A
0A
10V
12V
14V
16V
18V
VGE, GATE-EMITTER VOLTAGE
Figure 20. Typical short circuit collector
current as a function of gate-
emitter voltage
(VCE ⤠600V, Tj ⤠150°C)
Power Semiconductors
8
Rev. 2.3 Nov 09
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