SGW50N60HS_09 Datasheet, PDF (3/11 Pages) Infineon Technologies AG – High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation

SGW50N60HS
Switching Characteristic, Inductive Load, at T_j=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
-
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
T_j=25°C,
V_CC=400V,I_C=50A,
V_GE=0/15V,
R_G=6.8Ω
L _σ ¹⁾ = 5 5 n H ,
C_σ¹⁾ =40pF
Energy losses include
“tail” and diode
reverse recovery²⁾.
Switching Characteristic, Inductive Load, at T_j=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
T_j=150°C
V_CC=400V,I_C=50A,
V_GE=0/15V,
R_G= 1.8Ω
L_σ¹⁾ =60nH,
C_σ¹⁾ =40pF
Energy losses include
“tail” and diode
reverse recovery²⁾.
T_j=150°C
V_CC=400V,I_C=50A,
V_GE=0/15V,
R_G= 6.8Ω
L_σ¹⁾ =60nH,
C_σ¹⁾ =40pF
Energy losses include
“tail” and diode
reverse recovery²⁾.
min.
-
-
-
-
-
-
-
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
47
32
310
16
1.08
0.88
1.96
Value
typ.
50
28
225
14
1
0.90
1.9
48
31
350
20
1.5
1.1
2.6
Unit
max.
- ns
-
-
-
- mJ
-
-
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
-
-
-
- mJ
-
-
1 _{Leakage inductance Lσ an d Stray capacity Cσ due to test circuit in Figure E.}
2 _{Diode used in this test is IDP45E60}
Power Semiconductors
3
Rev. 2.3 Nov 09