SGW50N60HS_09 Datasheet, PDF (2/11 Pages) Infineon Technologies AG – High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation

SGW50N60HS
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
R_thJC
R_thJA
Conditions
Max. Value
Unit
0.3
K/W
40
Electrical Characteristic, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
V_(BR)CES
V_CE(sat)
V_GE(th)
I_CES
I_GES
g_fs
V_GE=0V, I_C=500µA
V_GE = 15V, I_C=50A
T_j=25°C
T_j=150°C
I_C=1mA,V_CE=V_GE
V_CE=600V,V_GE=0V
T_j=25°C
T_j=150°C
V_CE=0V,V_GE=20V
V_CE=20V, I_C=50A
min.
600
-
-
3
-
-
-
-
Value
Typ.
-
2.8
3.15
4
-
-
-
31
Unit
max.
-V
3.15
-
5
µA
40
3000
100 nA
-S
Dynamic Characteristic
Input capacitance
C_iss
V_CE=25V,
-
Output capacitance
C_oss
V_GE=0V,
-
Reverse transfer capacitance
C_rss
f=1MHz
-
Gate charge
Q_Gate
V_CC=480V, I_C=50A
-
V_GE=15V
Internal emitter inductance
L_E
-
measured 5mm (0.197 in.) from case
Short circuit collector current¹⁾
I_C(SC)
V_GE=15V,t_SC≤10µs
-
V_CC ≤ 600V,
T_j ≤ 150°C
2572
245
158
179
13
471
- pF
-
-
- nC
- nH
-A
1) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
Power Semiconductors
2
Rev. 2.3 Nov 09