SGW50N60HS_09 Datasheet, PDF (6/11 Pages) Infineon Technologies AG – High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation

SGW50N60HS
t_d(off)
100ns
t_f
t_d(on)
t_r
10ns
0A
20A
40A
60A
80A
Figure 9.
I_C, COLLECTOR CURRENT
Typical switching times as a
function of collector current
(inductive load, T_J=150°C,
V_CE=400V, V_GE=0/15V, R_G=6.8Ω,
Dynamic test circuit in Figure E)
100 ns
t_d(off)
t_d(on)
t_f
t_r
10 ns
0Ω
3Ω
6Ω
9Ω
12Ω 15Ω
R_G, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T_J=150°C,
V_CE=400V, V_GE=0/15V, I_C=50A,
Dynamic test circuit in Figure E)
t_d(off)
100ns
t_d(on)
t_r
t_f
10ns
25°C
50°C
75°C 100°C 125°C
T_J, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V_CE=400V,
V_GE=0/15V, I_C=50A, R_G=6.8Ω,
Dynamic test circuit in Figure E)
5,5V
5,0V
4,5V
4,0V
3,5V
3,0V
max.
2,5V
typ.
2,0V
1,5V
min.
1,0V
-50°C
0°C
50°C 100°C 150°C
T_J, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(I_C = 1mA)
Power Semiconductors
6
Rev. 2.3 Nov 09