SGW50N60HS_09 Datasheet, PDF (10/11 Pages) Infineon Technologies AG – High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation

SGW50N60HS
τ₁
r₁
T_j (t)
p(t)
r₁
τ₂
r₂
r₂
τ_n
r_n
r_n
T_C
Figure D. Thermal equivalent
circuit
Figure A. Definition of switching times
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Leakage inductance L_σ =55nH
a nd Stray capacity C_σ =40pF.
Power Semiconductors
10
Rev. 2.3 Nov 09