SGW50N60HS_09 Datasheet, PDF (4/11 Pages) Infineon Technologies AG – High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation

SGW50N60HS
140A
120A
T_C=80°C
100A
80A
T_C=110°C
60A
I_c
40A
20A
I_c
0A
10Hz
100Hz
1kHz
10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T_j ≤ 150°C, D = 0.5, V_CE = 400V,
V_GE = 0/+15V, R_G = 6.8Ω)
100A
t_P=1µs
2µs
10µs
10A
50µs
1ms
10ms
1A
DC
1V
10V
100V
1000V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, T_C = 25°C, T_j ≤ 150°C;
V_GE=15V)
350W
250W
150W
50W
25°C 50°C 75°C 100°C 125°C
Figure 3.
T_C, CASE TEMPERATURE
Power dissipation as a function of
case temperature
(T_j ≤ 150°C)
100A
90A
80A
70A
60A
50A
40A
30A
20A
10A
0A
25°C
75°C
125°C
T_C, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V_GE ≤ 15V, T_j ≤ 150°C)
Power Semiconductors
4
Rev. 2.3 Nov 09