SGW50N60HS_09 Datasheet, PDF (7/11 Pages) Infineon Technologies AG – High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation

SGW50N60HS
5mJ
*) E_on and E_ts include losses
due to diode recovery
E_ts*
4mJ
E_on*
3mJ
2mJ
E_off
1mJ
0mJ
0A
20A
40A
60A
80A
I_C, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T_J=150°C,
V_CE=400V, V_GE=0/15V, R_G=6.8Ω,
Dynamic test circuit in Figure E)
3.5 mJ
*) Eon and Ets include losses
due to diode recovery
3.0 mJ
2.5 mJ
E_ts*
2.0 mJ
1.5 mJ
1.0 mJ
0.5 mJ
E_on*
E_off
0.0 mJ
0Ω
3Ω
6Ω
9Ω 12Ω 15Ω
R_G, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T_J=150°C,
V_CE=400V, V_GE=0/15V, I_C=50A,
Dynamic test circuit in Figure E)
*) E_on and E_ts include losses
due to diode recovery
E_ts*
2mJ
E_on*
1mJ
E_off
0mJ
0°C
50°C
100°C
T_J, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, V_CE=400V,
V_GE=0/15V, I_C=50A, R_G=6.8Ω,
Dynamic test circuit in Figure E)
D=0.5
10^-1K/W _0.2
0.1
10^-2K/W
0.05
0.02
0.01
single pulse
R,(K/W)
0.116
0.0729
0.0543
0.0386
0.0173
R1
τ, (s)
0.0895
2.45E-02
1.95E-03
2.07E-04
1.05E-05
R2
10^-3K/W
1µs
C1=τ1/R1 C2=τ2/R2
10µs 100µs 1ms 10ms 100ms
t_P, PULSE WIDTH
Figure 16. IGBT transient thermal resistance
(D = t_p / T)
Power Semiconductors
7
Rev. 2.3 Nov 09