PTF080101S Datasheet, PDF (8/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz

PTF080101S
Package Outline Specifications
Package 32259
2X 3.30
60° X 6.60 [.130]
[60° X .260]
4X R0.25
[R.010]
MAX.
2X 1.27
[.050]
2X 3.30
[.130] ^CL
1.78
[.070]
CL
D
6.86
[.270]
10.16±0.25
[.400±.010]
2X 0.20±0.03
[.008±.001]
1.02 [0.040]
0.51 [0.020]
4X 0.51
[.020]
4X 0.25 MAX
[.010]
2.99 ±0.38
[1.14 ±.010]
G
6.86
[.270]
6.48
[.255] SQ
2X 1.65±0.51
[.065±.020]
0.74±0.05
[.028±.002]
0°-7°
DRAFT ANGLE
LEAD COPLANARITY
BOTTOM OF LEAD
TO BOTTOM OF PACKAGE
.000±.002 (TYP)
S
6.35
[.250] SQ
H-32259-2-1-2307
Diagram Notes:
1. Lead thickness: 0.21 ±0.03 [.008 ± .001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products.
Data Sheet
8 of 9
2004-10-05