PTF080101S Datasheet, PDF (3/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz

PTF080101S
Typical Performance (measurements taken in production test fixture)
EDGE Modulation Spectrum Performance
V_DD = 28 V, I_DQ = 150 m A, f = 959.8 MHz
T_CASE = 25°C
-55 T_CASE = 85°C
-60
400 kHz
-65
50
Ef f iciency
40
30
-70
20
600 kHz
-75
10
-80
0
28
30
32
34
36
38
Output Power (dBm)
EVM & Modulation Spectrum Performance
V_DD = 28 V, P_OUT = 4 W, f = 959.8 MHz
2.0
-55
400 KHz
1.8
-60
1.6
-65
EV M
1.4
-70
1.2
600 KHz ^-75
1.0
-80
0.08 0.10 0.12 0.14 0.16 0.18 0.20 0.22
Quiscent Drain Current (A)
Gain & Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 150 mA, f = 960 MHz
21
20
19 _Gain
18
17
16
Ef f iciency
15
14
20
25
30
35
40
Output Power (dBm)
70
60
50
40
30
20
10
0
45
Broadband Performance
V_DD = 28 V, I_DQ = 150 mA, P_OUT = 10 W
30
60
Ef f iciency
20
50
Gain
10
40
0
30
-10
Return Loss
20
-20
10
840 860 880 900 920 940 960
Frequency (MHz)
All published data at T_CASE = 25°C unless otherwise indicated
Data Sheet
3 of 9
2004-10-05