PTF080101S Datasheet, PDF (1/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz

PTF080101S
Thermally-Enhanced High Power RF LDMOS FET
10 W, 860 – 960 MHz
Description
The PTF080101S is a 10-watt, internally-matched GOLDMOS FET in-
tended for EDGE and CDMA applications in the 860 to 960 MHz band.
Thermally-enhanced packaging provides the coolest operation possible.
Full gold metallization ensures excellent device lifetime and reliability.
PTF080101S
Package 32259
Typical EDGE Performance
V_DD = 28 V, I_DQ = 150 mA, f = 959.8 MHz
5
T_CASE = 25°C
50
T_CASE = 85°C
4
Ef f iciency
40
3
30
2
20
1
10
EV M
0
0
28
30
32
34
36
38
Output Power (dBm)
Features
• Thermally-enhanced packaging
• Broadband internal matching
• Typical EDGE performance
- Average output power = 5 W
- Gain = 18.5 dB
- Efficiency = 38%
• Typical CW performance
- Output power at P–1dB = 13 W
- Gain = 17.5 dB
- Efficiency = 55%
• Integrated ESD protection: Human Body
Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
10 W (CW) output power
ESD: Electrostatic discharge sensitive device—observe handling precautions!
RF Characteristics at T_CASE = 25°C unless otherwise indicated
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 150 mA, P_OUT = 5.0 W, f = 959.8 MHz
Characteristic
Symbol Min Typ
Max Units
Error Vector Magnitude
EVM (RMS) —
2.0
—
%
Modulation Spectrum @ 400 kHz
ACPR
—
–61
—
dBc
Modulation Spectrum @ 600 kHz
ACPR
—
–71
—
dBc
Gain
Drain Efficiency
G_ps
—
18.5
—
dB
η_D
—
38
—
%
Data Sheet
1 of 9
2004-10-05