PTF080101S Datasheet, PDF (6/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz

PTF080101S
Reference Circuit
C11
0.001µF
R5
1.3KV
R4
1.2KV
QQ1
LM7805
Q1
VDD
BCP56
C0.10201µF _C13
0.001µF
R274K _V
R26K _V
+
C14
10 µF
R5.81K _V
R9
10 V
C15
0.1 µF
C1
36 pF
R10
5.1KV l17
R11
10 V
RF_IN
l1
l3
l2
l16
l4
C2
2.4 pF
l5
C363 _pF
DUT
l6
l7
C4
7.5pF
Reference Circuit Schematic for 960 MHz
l10
C5
36pF
l11
V DD
C6
+ C7
36 pF
100 µF
l9
l8
l12
C9
36 pF
l13
l14
C8
2.7 pF
l15
C10
3.0 pF
RF_OUT
080101sf_sch
Circuit Assembly Information
DUT
PCB
PTF080101S
ε 0.76 mm [.030”] thick, _r = 4.5
LDMOS Transistor
2 oz. copper
Rogers TMM4
Microstrip
l1
l2
l3
l4
l5
l6
l7
l8
l9
l10
l11
l12
l13
l14
l15
l16
l17
Electrical Characteristics at 960 MHz*
0.023 λ, 50.0 Ω
0.172 λ, 16.0 Ω
0.044 λ, 50.0 Ω
0.084 λ, 50.0 Ω
0.149 λ, 9.3 Ω
0.010 λ, 9.3 Ω
0.023 λ, 27.0 Ω
0.065 λ, 11.9 Ω
0.031 λ, 70.0 Ω
0.108 λ, 70.0 Ω
0.108 λ, 70.0 Ω
0.094 λ, 11.9 Ω
0.041 λ, 11.9 Ω
0.078 λ, 50.0 Ω
0.011 λ, 50.0 Ω
0.076 λ, 70.0 Ω
0.165 λ, 70.0 Ω
Dimensions: L x W (mm)
3.68 x 1.27
25.40 x 0.64
6.99 x 1.27
13.46 x 1.27
21.46 x 11.94
1.52 x 11.94
3.56 x 3.25
9.53 x 9.02
5.08 x 0.64
17.78 x 0.64
17.78 x 0.64
13.72 x 9.02
5.97 x 9.02
12.45 x 1.27
1.78 x 1.27
11.18 x 0.64
24.38 x 0.64
*Electrical characteristics are rounded.
Data Sheet
6 of 9
Dimensions: L x W (in.)
0.145 x 0.050
1.000 x 0.025
0.275 x 0.050
0.530 x 0.050
0.845 x 0.470
0.060 x 0.470
0.140 x 0.128
0.375 x 0.355
0.200 x 0.025
0.700 x 0.025
0.700 x 0.025
0.540 x 0.355
0.235 x 0.355
0.490 x 0.050
0.070 x 0.050
0.440 x 0.025
0.960 x 0.025
2004-10-05