PTF080101S Datasheet, PDF (2/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz

PTF080101S
RF Characteristics (cont.)
Two-Tone Measurements (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 150 mA, P_OUT = 10 W PEP, f = 960 MHz, tone spacing = 1 MHz
Characteristic
Symbol Min Typ
Gain
Drain Efficiency
G_ps
18.0 18.5
η_D
36.0
38
Intermodulation Distortion
IMD
—
–32
Max
—
—
–30
Units
dB
%
dBc
DC Characteristics at T_CASE = 25°C unless otherwise indicated
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 µA
V_DS = 28 V, V_GS = 0 V
V_GS = 10 V, I_DS = 0.1 A
V_DS = 28 V, I_DQ = 150 mA
V_GS = 10 V, V_DS = 0 V
Symbol
V_(BR)DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Min
65
—
—
2.5
—
Typ
—
—
0.83
3.2
—
Max
—
1.0
—
4.0
1.0
Units
V
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C)
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_θJC
Value
65
–0.5 to +12
200
58
0.333
–40 to +150
3.0
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type
PTF080101S
Package Outline
32259
Package Description
Thermally-enhanced SMD, single-ended
Marking
PTF080101S
Data Sheet
2 of 9
2004-10-05