PTF080101S Datasheet, PDF (5/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz

PTF080101S
Typical Performance (cont.)
IS-95 CDMA Performance
V_DD = 28 V, I_DQ = 150 mA, f = 960 MHz
40
-40
35
Adj 750 kHz
-45
30
-50
25
-55
20
-60
Ef f iciency
15
-65
10
-70
5
Alt 1 1.98MHz
-75
0
-80
18 20 22 24 26 28 30 32 34 36 38
Output Power (dBm), Avg.
Gate-Source Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
-20
0.05 A
0.28 A
0.51 A
0.74 A
0.97 A
1.20 A
0
20 40 60 80 100
Case Temperature (°C)
Broadband Circuit Impedance
Z Source
D
Z Load
Frequency
MHz
860
880
900
920
940
960
G
S
Z Source Ω
R
jX
1.4
–0.8
1.3
–0.2
1.4
0.2
1.5
0.5
1.5
1.0
1.6
1.1
Z Load Ω
R
jX
10.0
8.0
10.0
8.4
10.0
8.7
10.0
9.0
10.1
9.3
10.3
9.4
Data Sheet
5 of 9
Z₀ = 50 Ω
960 MHz
860 MHz
Z Load
Z Source
960 MHz
860 MHz
0.1
2004-10-05