PTF080101S Datasheet, PDF (4/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz

Typical Performance (cont.)
Gain vs. Output Power
V_DD = 28 V, f = 960 MHz
20.5
I_DQ = 300 mA
19.5
I_DQ = 150 mA
18.5 I_DQ = 50 mA
17.5
27
30
33
36
39
42
Output Power (dBm)
PTF080101S
Output Power vs. Supply Voltage
I_DQ = 150 mA, f = 960 MHz
42
41
40
39
38
37
20
25
30
35
Supply Voltage (V)
Intermodulation Distortion vs. Output Power
V_DD = 28 V, I_DQ = 150 mA, f₁ = 959 MHz, f₂ = 960 MHz
-20
-30
-40
-50
-60
-70
-80
25
3rd Order
5th
7th
30
35
40
45
Output Power, PEP (dBm)
3-Carrier CDMA 2000 Performance
V_DD = 28 V, I_DQ = 150 mA, f = 960 MHz
50
-30
45
-35
40
-40
35
Adj 1.98 MHz
-45
30 Alt 1, 3.21 MHz
-50
25
-55
20
-60
15
-65
10
5
Ef f icienc y
0
-70
Alt 2, 5.23 MHz _-75
-80
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
Data Sheet
4 of 9
2004-10-05