IKW15N120T2_08 Datasheet, PDF (8/15 Pages) Infineon Technologies AG – Low Loss DuoPack : IGBT in 2nd generation TrenchStop technology

IKW15N120T2
TrenchStop^® 2^nd generation Series
7.5mJ
*) E_on and E_tsinclude losses
due to diode recovery
E_ts*
5.0mJ
2.5mJ
E_on*
E_off
0.0mJ
7.5A
15.0A
22.5A
I_C, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T_J=175°C,
V_CE=600V, V_GE=0/15V, R_G=41.8Ω,
Dynamic test circuit in Figure E)
5.00 mJ
*) E_on and E_ts include losses
due to diode recovery
E_ts*
3.75 mJ
2.50 mJ
E_on*
1.25 mJ
E_off
0.00 mJ
10Ω 30Ω 50Ω 70Ω 90Ω 110Ω
R_G, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T_J=175°C,
V_CE=600V, V_GE=0/15V, I_C=15A,
Dynamic test circuit in Figure E)
*) E_on and E_ts include losses
due to diode recovery
*) E_on and E_ts include losses
due to diode recovery
2.4mJ
5.00mJ
E_ts*
E_ts*
3.75mJ
E_on*
E_on*
1.2mJ
2.50mJ
E_off
E_off
1.25mJ
0.0mJ
0°C
50°C
100°C 150°C
T_J, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, V_CE=600V,
V_GE=0/15V, I_C=15A, R_G=41.8Ω,
Dynamic test circuit in Figure E)
0.00mJ
400V
500V
600V
700V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, T_J=175°C,
V_GE=0/15V, I_C=15A, R_G=41.8Ω,
Dynamic test circuit in Figure E)
Power Semiconductors
8
Rev. 2.1 Sep 08