IKW15N120T2_08 Datasheet, PDF (7/15 Pages) Infineon Technologies AG – Low Loss DuoPack : IGBT in 2nd generation TrenchStop technology

IKW15N120T2
TrenchStop^® 2^nd generation Series
t_d(off)
t_f
100ns
t_d(on)
10ns
t_r
7.5A
15.0A
22.5A
I_C, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, T_J=175°C,
V_CE=600V, V_GE=0/15V, R_G=41.8Ω,
Dynamic test circuit in Figure E)
1000 ns
t_d(off)
t_f
100 ns
t_d(on)
10 ns ^tr
10Ω 30Ω 50Ω 70Ω 90Ω 110Ω
R_G, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T_J=175°C,
V_CE=600V, V_GE=0/15V, I_C=15A,
Dynamic test circuit in Figure E)
t_d(off)
100ns
t_f
t_d(on)
t_r
10ns
0°C
50°C
100°C 150°C
T_J, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V_CE=600V,
V_GE=0/15V, I_C=15A, R_G=41.8Ω,
Dynamic test circuit in Figure E)
6.5V
6.0V
5.5V
5.0V
max.
4.5V
4.0V
typ.
3.5V
min.
0°C
50°C
100°C 150°C
T_J, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(I_C = 600µA)
Power Semiconductors
7
Rev. 2.1 Sep 08