IKW15N120T2_08 Datasheet, PDF (2/15 Pages) Infineon Technologies AG – Low Loss DuoPack : IGBT in 2nd generation TrenchStop technology

IKW15N120T2
TrenchStop^® 2^nd generation Series
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
R_thJC
R_thJCD
R_thJA
Conditions
Max. Value
Unit
0.63
K/W
1.12
40
Electrical Characteristic, at T_j = 25 °C, unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Symbol
Conditions
V_(BR)CES
V_CE(sat)
V_GE=0V, I_C=500µA
V_GE = 15V, I_C=15A
T_j=25°C
T_j=150°C
T_j=175°C
V_F
V_GE=0V, I_F=15A
T_j=25°C
T_j=150°C
T_j=175°C
V_GE(th)
I_CES
I_C=0.6mA,V_CE=V_GE
V_CE=1200V,
V_GE=0V
T_j=25°C
T_j=150°C
T_j=175°C
I_GES
V_CE=0V,V_GE=20V
g_fs
V_CE=20V, I_C=15A
min.
1200
-
-
-
-
-
-
5.2
-
-
-
-
-
Value
typ.
-
1.7
2.1
2.2
1.75
1.8
1.75
5.8
-
-
-
-
8
Unit
max.
-V
2.2
-
-
2.2
-
-
6.4
mA
0.4
4.0
20
600 nA
-S
Power Semiconductors
2
Rev. 2.1 Sep 08