IKW15N120T2_08 Datasheet, PDF (11/15 Pages) Infineon Technologies AG – Low Loss DuoPack : IGBT in 2nd generation TrenchStop technology

IKW15N120T2
TrenchStop^® 2^nd generation Series
600ns
500ns
400ns
300ns
200ns
100ns
T_J=175°C
T_J=25°C
0ns
400A/µs
800A/µs
1200A/µs
di_F/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(V_R=600V, I_F=15A,
Dynamic test circuit in Figure E)
3µC
T_J=175°C
2µC
1µC
T_J=25°C
0µC
400A/µs
800A/µs
1200A/µs
di_F/dt, DIODE CURRENT SLOPE
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(V_R=600V, I_F=15A,
Dynamic test circuit in Figure E)
T_J=175°C
20A
15A
T_J=25°C
10A
5A
0A
400A/µs
800A/µs
1200A/µs
di_F/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
(V_R=600V, I_F=15A,
Dynamic test circuit in Figure E)
-600A/µs
T_J=25°C
-500A/µs
-400A/µs
-300A/µs
T_J=175°C
-200A/µs
-100A/µs
-0A/µs
400A/µs
800A/µs
1200A/µs
di_F/dt, DIODE CURRENT SLOPE
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(V_R=600V, I_F=15A,
Dynamic test circuit in Figure E)
Power Semiconductors
11
Rev. 2.1 Sep 08