IKW15N120T2_08 Datasheet, PDF (1/15 Pages) Infineon Technologies AG – Low Loss DuoPack : IGBT in 2nd generation TrenchStop technology

IKW15N120T2
TrenchStop^® 2^nd generation Series
Low Loss DuoPack : IGBT in 2^nd generation TrenchStop^® technology
with soft, fast recovery anti-parallel EmCon diode
• Short circuit withstand time – 10µs
• Designed for :
- Frequency Converters
- Uninterrupted Power Supply
• TrenchStop^® 2^nd generation for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• Easy paralleling capability due to positive temperature coefficient
in V_CE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Qualified according to JEDEC¹ for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3
Type
V_CE
I_C V_{CE(sat),Tj=25°C} T_j,max Marking Code
IKW15N120T2 1200V 15A
1.75V
175°C K15T1202
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current (Tj = 150°C)
T_C = 25°C
T_C = 110°C
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area
V_CE ≤ 1200V, T_j ≤ 175°C
Diode forward current (Tj = 150°C)
T_C = 25°C
T_C = 110°C
Diode pulsed current, t_p limited by T_jmax
Gate-emitter voltage
Short circuit withstand time²⁾
V_GE = 15V, V_CC ≤ 600V, T_{j, start} ≤ 175°C
Power dissipation
T_C = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Wavesoldering only, temperature on leads only
V_CE
I_C
I_Cpuls
-
I_F
I_Fpuls
V_GE
t_SC
P_tot
T_j
T_stg
-
Package
PG-TO-247-3
Value
1200
30
15
60
60
25
15
60
±20
10
235
-40...+175
-55...+150
260
Unit
V
A
V
µs
W
°C
1 _{J-STD-020 and JESD-022}
2) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
Power Semiconductors
1
Rev. 2.1 Sep 08