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| IKW15N120T2_08 Datasheet, PDF (10/15 Pages) Infineon Technologies AG – Low Loss DuoPack : IGBT in 2nd generation TrenchStop technology | |||
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IKW15N120T2
TrenchStop® 2nd generation Series
25A
VCE
20A
15A
600V
15A
400V
IC
10A
600V
400V
10A
200V
5A
IC
0A
0V
0us
0.4us
0.8us
1.2us
t, TIME
Figure 21. Typical turn on behavior
(VGE=0/15V, RG=41.8â¦, Tj = 175°C,
Dynamic test circuit in Figure E)
5A
200V
VCE
0A
0V
0us
0.4us
0.8us
1.2us
t, TIME
Figure 22. Typical turn off behavior
(VGE=15/0V, RG=41.8â¦, Tj = 175°C,
Dynamic test circuit in Figure E)
100K/W
D=0.5
0.2
10-1K/W 0.1
0.05
10-2K/W
0.02
R,(K/W)
0.143
0.217
0.258
0.017
0.01 R1
single pulse
Ï, (s)
3.06*10-4
3.47*10-3
1.71*10-2
2.63*10-1
R2
C1=Ï1/R1 C2=Ï2/R2
10µs 100µs
1ms
10ms 100ms
tP, PULSE WIDTH
Figure 23. IGBT transient thermal resistance
(D = tp / T)
100K/W
D=0.5
0.2
0.1
10-1K/W
0.05
R,(K/W)
0.291
0.434
0.363
0.028
Ï, (s)
2.75*10-4
2.60*10-3
1.48*10-2
1.78*10-1
R1
R2
0.02
0.01
C1=Ï1/R1 C2=Ï2/R2
single pulse
10-2K/W
10µs 100µs
1ms
10ms 100ms
tP, PULSE WIDTH
Figure 24. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)
Power Semiconductors
10
Rev. 2.1 Sep 08
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