IKW15N120T2_08 Datasheet, PDF (3/15 Pages) Infineon Technologies AG – Low Loss DuoPack : IGBT in 2nd generation TrenchStop technology

IKW15N120T2
TrenchStop^® 2^nd generation Series
Dynamic Characteristic
Input capacitance
C_iss
V_CE=25V,
-
Output capacitance
C_oss
V_GE=0V,
-
Reverse transfer capacitance
C_rss
f=1MHz
-
Gate charge
Q_Gate
V_CC=960V, I_C=40A
-
V_GE=15V
Internal emitter inductance
L_E
-
measured 5mm (0.197 in.) from case
Short circuit collector current¹⁾
I_C(SC)
V_GE=15V,t_SC≤10µs
-
V_CC = 600V,
T_j,start = 25°C
T_j,start = 175°C
1000
100
56
93
13
82
60
- pF
-
-
- nC
- nH
-A
Switching Characteristic, Inductive Load, at T_j=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t _b
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_rr
Q_rr
I_rrm
di_rr/dt
T_j=25°C,
V_CC=600V,I_C=15A,
V_GE=0/15V,
R_G=41.8Ω,
L_σ²⁾=126nH,
C_σ²⁾=34pF
Energy losses include
“tail” and diode
reverse recovery.
T_j=25°C,
V_R=600V, I_F=15A,
di_F/dt=450A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
32
25
362
95
1.25
0.8
2.05
300
1.3
10
215
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
µC
A
- A/µs
1) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
2) _{Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.}
Power Semiconductors
3
Rev. 2.1 Sep 08