BFP720F_12 Datasheet, PDF (8/25 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

2
Features
• High performance general purpose wideband LNA transistor
• Operation voltage: 1.0 V to 4.0 V
• Transistor geometry optimized for low current applications
• 26.5 dB maximum stable gain at 1.9 GHz and only 13 mA
• 15 dB maximum available gain at 10 GHz and only 13 mA
• 0.7 dB minimum noise figure at 5.5 GHz and 1.0 dB at 10 GHz
• High linearity OP_1dB = 7 dBm and OIP₃ = 21 dBm at 5.5 GHz
and low current consumption of 13 mA
• Thin small flat Pb-free (RoHS compliant) and halogen-free
package with visible leads
• Qualification report according to AEC-Q101 available
BFP720F
Features
Applications
FM Radio, Mobile TV, RKE, AMR, Cellular, ZigBee, GPS, WiMAX, SDARs, Satellite Radio, Bluetooth, WiFi,
Cordless phone, UMTS, WLAN, UWB, LNB
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name
BFP720F
Package
TSFP-4-1
1=B
Pin Configuration
2=E
3=C
4=E
Marking
R9s
Data Sheet
8
Revision 1.1, 2012-10-25