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BFP720F_12 Datasheet, PDF (17/25 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor
BFP720F
Electrical Characteristics
Table 5-10 AC Characteristics, VCE = 3 V, f = 5.5 GHz
Parameter
Symbol
Min.
Maximum Power Gain
Low noise operation point
High linearity operation point
Gms
Gms
–
–
Transducer Gain
Low noise operation point
High linearity operation point
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB gain compression point
3rd order intercept point
S21
–
S21
–
NFmin
–
Gass
–
OP1dB
–
OIP3
–
Values
Typ. Max.
19
–
21.5 –
15
–
16.5 –
0.7
–
15
–
7
–
21
–
Unit Note / Test Condition
dB
dB
dB
dBm
IC = 5 mA
IC = 13 mA
ZS = ZL = 50 Ω
IC = 5 mA
IC = 13 mA
ZS = Zopt
IC = 5 mA
IC = 5 mA
ZS = ZL = 50 Ω
IC = 13 mA
IC = 13 mA
Table 5-11 AC Characteristics, VCE = 3 V, f = 10 GHz
Parameter
Symbol
Min.
Maximum Power Gain
Low noise operation point
High linearity operation point
Transducer Gain
Low noise operation point
High linearity operation point
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB gain compression point
3rd order intercept point
Gma
–
Gma
–
S21
–
S21
–
NFmin
–
Gass
–
OP1dB
–
OIP3
–
Values
Typ. Max.
14
–
15
–
9.5
–
10.5 –
1.0
–
10.5 –
8
–
19.5 –
Unit Note / Test Condition
dB
dB
dB
dBm
IC = 5 mA
IC = 13 mA
ZS = ZL = 50 Ω
IC = 5 mA
IC = 13 mA
ZS = Zopt
IC = 5 mA
IC = 5 mA
ZS = ZL = 50 Ω
IC = 13 mA
IC = 13 mA
Notes
1. Gms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 1
2. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all
measured results
Data Sheet
17
Revision 1.1, 2012-10-25