BFP720F_12 Datasheet, PDF (10/25 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

4
Thermal Characteristics
BFP720F
Thermal Characteristics
Table 4-1 Thermal Resistance
Parameter
Symbol
Values
Unit Note / Test Condition
Min.
Typ.
Max.
Junction - soldering point¹⁾ R_thJS
–
410
–
K/W –
1)For the definition of R_thJS please refer to Application Note AN077 (Thermal Resistance Calculation)
120
100
80
60
40
20
0
0
50
100
Ts [°C]
150
Figure 4-1 Total Power Dissipation P_tot = f (T_s)
Data Sheet
10
Revision 1.1, 2012-10-25