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| BFP720F_12 Datasheet, PDF (7/25 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor | |||
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BFP720F
1
Product Brief
Product Brief
The BFP720F is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineonâs reliable
high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports
voltages up to VCEO = 4.0 V and currents up to IC = 25 mA. The device is especially suited for mobile applications
in which low power consumption is a key requirement. The typical transition frequency is approximately 45 GHz,
hence the device offers high power gain at frequencies up to 12 GHz in amplifier applications. The device is
housed in a thin small flat plastic package with visible leads.
Data Sheet
7
Revision 1.1, 2012-10-25
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