BFP720F_12 Datasheet, PDF (18/25 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

5.4
Characteristic Curves
BFP720F
Electrical Characteristics
50
45
3.00V
40
35
2.00V
30
25
20
1.50V
15
10
1.00V
5
0.50V
0
0
1
2
10
10
10
I [mA]
C
Figure 5-2 Transition Frequency f_T = f (I_C, V_CE), f = 1 GHz, V_CE Parameter in V
42
40
38
36
34
32
30
G
28
ms
26
24
22
20
|S |²
18
21
G
ma
16
14
12
10
8
6
0
1
2
3
4
5
6
7
8
9
10
f [GHz]
Figure 5-3 Power Gain G_ma, G_ms, IS₂₁I² = f (f), V_CE = 3 V, I_C = 13 mA
Data Sheet
18
Revision 1.1, 2012-10-25