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BFP720F_12 Datasheet, PDF (19/25 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor | |||
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BFP720F
Electrical Characteristics
42
40
0.15GHz
38
36
34
0.45GHz
32
0.90GHz
30
1.50GHz
28
1.90GHz
2.40GHz
26
3.50GHz
24
22
5.50GHz
20
18
16
10.00GHz
14
12
10
0
5
10
15
20
25
30
I [mA]
C
Figure 5-4 Power Gain Gma, Gms = f (IC), VCE = 3 V, f = Parameter in GHz
40
38
0.15GHz
36
34
0.45GHz
32
30
0.90GHz
28
1.50GHz
1.90GHz
26
2.40GHz
24
3.50GHz
22
5.50GHz
20
18
16
10.00GHz
14
12
10
8
6
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V [V]
CE
Figure 5-5 Power Gain Gma, Gms = f (VCE), IC = 13 mA, f = Parameter in GHz
Data Sheet
19
Revision 1.1, 2012-10-25
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