BFP720F_12 Datasheet, PDF (15/25 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

BFP720F
Electrical Characteristics
Table 5-6 AC Characteristics, V_CE = 3 V, f = 1.5 GHz
Parameter
Symbol
Min.
Maximum Power Gain
Low noise operation point
High linearity operation point
Transducer Gain
Low noise operation point
High linearity operation point
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB gain compression point
3rd order intercept point
G_ms
–
G_ms
–
S₂₁
–
S₂₁
–
NF_min
–
G_ass
–
OP_1dB
–
OIP₃
–
Values
Typ. Max.
24
–
27.5 –
21.5 –
26
–
0.45 –
24
–
6
–
21
–
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 5 mA
I_C = 13 mA
Z_S = Z_L = 50 Ω
I_C = 5 mA
I_C = 13 mA
Z_S = Z_opt
I_C = 5 mA
I_C = 5 mA
Z_S = Z_L = 50 Ω
I_C = 13 mA
I_C = 13 mA
Table 5-7 AC Characteristics, V_CE = 3 V, f = 1.9 GHz
Parameter
Symbol
Min.
Maximum Power Gain
Low noise operation point
High linearity operation point
Transducer Gain
Low noise operation point
High linearity operation point
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB gain compression point
3rd order intercept point
G_ms
–
G_ms
–
S₂₁
–
S₂₁
–
NF_min
–
G_ass
–
OP_1dB
–
OIP₃
–
Values
Typ. Max.
23
–
26.5 –
21
–
24.5 –
0.5
–
23
–
6.5
–
21
–
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 5 mA
I_C = 13 mA
Z_S = Z_L = 50 Ω
I_C = 5 mA
I_C = 13 mA
Z_S = Z_opt
I_C = 5 mA
I_C = 5 mA
Z_S = Z_L = 50 Ω
I_C = 13 mA
I_C = 13 mA
Data Sheet
15
Revision 1.1, 2012-10-25