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TLE8209-2SA Datasheet, PDF (7/38 Pages) Infineon Technologies AG – SPI Programmable H-Bridge
TLE8209-2SA
General Product Characteristics
4
General Product Characteristics
4.1
Absolute Maximum Ratings
Absolute Maximum Ratings 1)
Tj = -40 °C to 150 °C; all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter
Symbol
Limit Values Unit Test Conditions / Comment
Min.
Max.
4.1.1 Junction temperature
Tj
-40
150
150
175
°C –
100h cumulative
4.1.2 Storage temperature
Ts
4.1.3 Ambient temperature
Ta
4.1.4 Battery supply voltage VS
-55
150
-40
125
-0.5
40
-2
40
4.1.5 Logic supply voltage
VDD
-0.5
18
4.1.6 Supply for logic out
VDDIO
-0.5
18
4.1.7 Voltage at logic pins
VIN
-0.5
18
ABE, IN1, IN2, DIS, SCK,
SS/SF, SI
°C –
°C –
V
Static destruction proof
V
Dynamic destruction proof
t < 0.5 s (single pulse,
Tjstart < 85 °C)
V
–
V
–
V
–
4.1.8 Voltage at SO
VSO
-0.5
VDDIO
V
–
+0.3
4.1.9 Voltage at CP
4.1.10 Voltage at GNDABE
ESD Susceptibility
4.1.11 ESD Resistivity to GND
4.1.12
4.1.13
4.1.14
VCP
VS-0.3 VS+5.0 V
VGNDABE VGND-0.3 VGND+0.3 V
VESD
-2
2
kV
-8
8
kV
-500
500
V
-750
750
V
0V < VS < 40V
HBM2)
HBM2), Pins OUT1 and OUT2
CDM3)
CDM3), Pins 1, 10, 11, 20
1) Not subject to production test, specified by design.
2) ESD susceptibility HBM according to EIA/JESD22-A114-B (1.5kΩ, 100pF)
3) ESD susceptibility, Charged Device Model “CDM” EIA/JESD22-C101
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
Data Sheet
7
Rev. 1.0, 2010-02-16