TLE8209-2SA Datasheet, PDF (13/38 Pages) Infineon Technologies AG – SPI Programmable H-Bridge

TLE8209-2SA
Logic Inputs and Outputs
Electrical Characteristics: Control Inputs (cont’d)
V_S = 5 V to 28 V; V_DD = 5.0 V; T_j = -40 °C to 150 °C, all voltages with respect to ground, positive current flowing
into pin (unless otherwise specified)
Pos. Parameter
Symbol
Limit Values
Unit Test Conditions
Min.
Typ. Max.
SCK
6.0.27 Low level
V_{SCK_L}
-0.3
6.0.28 High level
V_{SCK_H}
2.0
6.0.29 Hysteresis
V_{SCK_HYS} 0.2
6.0.30 Input Current (Pull Up) I_SCK
-30
6.0.31 Input Capacity¹⁾
C_SCK
–
SS/SF
–
1.0
V–
–
V_DD+0.3 V
–
–
1.0
V–
-20 -10
–
14
µA 0 V < V_SCK < 2.1 V
pF ²⁾
6.0.32
6.0.33
6.0.34
6.0.35
6.0.36
6.0.37
6.0.38
6.0.39
6.0.40
SO
Low level
High level
Hysteresis
Input Current in SPI
mode (Pull Up)
Input Current in SF
mode (Open Drain)
Input Capacity¹⁾
V_{SS_L}
V_{SS_H}
V_{SS_HYS}
I_SS
-0.3
2.0
0.2
-30
-30
0
I_SF
0
300
C_SS
–
–
1.0
V–
–
V_DD+0.3 V
–
–
1.0
V–
-20 -10
–
5
2
5
2
5
–
–
–
15
µA 0 V < V_SS < 2.1 V
µA 2.1 V < V_SS < 3.0 V
µA V_SS > 3.0 V
µA V_SF = 5.0 V, SF inactive
µA V_SF = 1.0 V, SF active
pF ²⁾
6.0.41 Low level
6.0.42 High level
V_{SO_L}
V_{SO_H}
0.0
–
V_DDIO-0.75 –
6.0.43 Output capacitance¹⁾ C_SO
–
–
6.0.44 Leakage current
I_SO
-2
–
1) Not subject to production test; specified by design
2) V_bias = 2 V; V_test = 20 mVpp; f = 1 MHz
0.4
V_DDIO
19
2
V
I_SO = 2 mA
V
I_SO = -2 mA
2.9 V < V_DDIO < 5.5 V
pF In tristate²⁾
µA In tristate
0 < V_SO < V_DDIO
Data Sheet
13
Rev. 1.0, 2010-02-16