SKW20N60HS_08 Datasheet, PDF (7/14 Pages) Infineon Technologies AG – High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation

SKW20N60HS
t_{d ( o ff)}
100ns
t_f
10ns
t_{d (o n )}
t_r
100 ns
t_d(off)
t_f
t_d(on)
10 ns
t_r
1ns
0A
10A
20A
30A
I_C, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, T_J=150°C,
V_CE=400V, V_GE=0/15V, R_G=16Ω,
Dynamic test circuit in Figure E)
1 ns
0Ω
10Ω
20Ω
30Ω
40Ω
R_G, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T_J=150°C,
V_CE=400V, V_GE=0/15V, I_C=20A,
Dynamic test circuit in Figure E)
t_d(off)
100ns
t_d(on)
t_r
t_f
10ns
0°C
50°C
100°C
150°C
T_J, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V_CE=400V,
V_GE=0/15V, I_C=20A, R_G=16Ω,
Dynamic test circuit in Figure E)
5,0V
4,5V
4,0V
max.
3,5V
3,0V
typ.
2,5V
min.
2,0V
1,5V
-50°C
0°C
50°C 100°C 150°C
T_J, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(I_C = 0.5mA)
Power Semiconductors
7
Rev. 2.3 Sep 08