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SKW20N60HS_08 Datasheet, PDF (13/14 Pages) Infineon Technologies AG – High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation | |||
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Figure A. Definition of switching times
SKW20N60HS
i,v
di /dt
F
I
F
I
rrm
t =t +t
rr S F
Q =Q +Q
rr
S
F
t
rr
t
t
S
F
QQ
S
F
10% I
t
rrm
di /dt V
90% I r r
R
rrm
Figure C. Definition of diodes
switching characteristics
Ï1
r1
Tj (t)
p(t)
r1
Ï2
r2
r2
Ïn
rn
rn
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Leakage inductance LÏ =60nH
a nd Stray capacity C Ï =40pF.
Power Semiconductors
13
Rev. 2.3 Sep 08
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