SKW20N60HS_08 Datasheet, PDF (6/14 Pages) Infineon Technologies AG – High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation

SKW20N60HS
50A
40A
30A
20A
V_GE=20V
15V
13V
11V
9V
7V
5V
10A
0A
0V
2V
4V
6V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(T_j = 25°C)
50A
V_GE=20V
15V
13V
40A
11V
9V
30A
7V
5V
20A
10A
0A
0V
2V
4V
6V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(T_j = 150°C)
40A
T_J=-55°C
25°C
150°C
20A
0A
0V
2V
4V
6V
8V
V_GE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(V_CE=10V)
5,5V
5,0V
4,5V
4,0V
I_C=40A
3,5V
3,0V
I_C=20A
2,5V
2,0V
I_C=10A
1,5V
1,0V
-50°C
0°C
50°C 100°C 150°C
Figure 8.
T_J, JUNCTION TEMPERATURE
Typical collector-emitter
saturation voltage as a function of
junction temperature
(V_GE = 15V)
Power Semiconductors
6
Rev. 2.3 Sep 08