SKW20N60HS_08 Datasheet, PDF (3/14 Pages) Infineon Technologies AG – High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation

SKW20N60HS
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
C_iss
C_oss
C_rss
V_CE=25V,
V_GE=0V,
f=1MHz
-
1100
pF
-
150
-
64
Gate charge
Q_Gate
V_CC=480V, I_C=20A
-
100
nC
V_GE=15V
Internal emitter inductance
L_E
-
13
nH
measured 5mm (0.197 in.) from case
Short circuit collector current¹⁾
I_C(SC)
V_GE=15V,t_SC≤10µs
-
170
A
V_CC ≤ 600V,
T_j ≤ 150°C
Switching Characteristic, Inductive Load, at T_j=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
T_j=25°C,
V_CC=400V,I_C=20A,
V_GE=0/15V,
R_G=16Ω
L_σ²⁾ =60nH,
C_σ²⁾ =40pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
18
15
207
13
0.39
0.30
0.69
Unit
max.
ns
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t_rr
T_j=25°C,
-
130
t_S
V_R=400V, I_F=20A,
-
15
t_F
di_F/dt=1100A/µs
-
115
Diode reverse recovery charge
Q_rr
-
730
Diode peak reverse recovery current I _{r r m}
-
16
Diode peak rate of fall of reverse
recovery current during t _b
di_rr/dt
-
540
ns
nC
A
A/µs
1) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
2) _{Leakage inductance L σ a nd Stray capacity C σ due to test circuit in Figure E.}
Power Semiconductors
3
Rev. 2.3 Sep 08