SKW20N60HS_08 Datasheet, PDF (10/14 Pages) Infineon Technologies AG – High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation

SKW20N60HS
400ns
300ns
I_F=40A
200ns
I_F=20A
100ns
200A/µs
400A/µs
600A/µs
I_F=10A
800A/µs
di_F/dt, DIODE CURRENT SLOPE
Figure 21. Typical reverse recovery time as
a function of diode current slope
(V_R=400V, T_J=150°C,
Dynamic test circuit in Figure E)
2,0µC
1,5µC
1,0µC
0,5µC
I_F=40A
I_F=20A
I_F=10A
0,0µC
200A/µs
400A/µs
600A/µs
800A/µs
di_F/dt, DIODE CURRENT SLOPE
Figure 22. Typical reverse recovery charge
as a function of diode current
slope
(V_R=400V, T_J=150°C,
Dynamic test circuit in Figure E)
25A
I_F=40A I_F=20A
20A
15A
I_F=10A
10A
5A
0A
200A/µs 400A/µs 600A/µs 800A/µs
di_F/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery current
as a function of diode current
slope
(V_R=400V, T_J=150°C,
Dynamic test circuit in Figure E)
-400A/µs
-300A/µs
-200A/µs
-100A/µs
-0A/µs
200A/µs
400A/µs
600A/µs
800A/µs
di_F/dt, DIODE CURRENT SLOPE
Figure 24. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(V_R=400V, T_J=150°C,
Dynamic test circuit in Figure E)
Power Semiconductors
10
Rev. 2.3 Sep 08