SKW20N60HS_08 Datasheet, PDF (4/14 Pages) Infineon Technologies AG – High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation

SKW20N60HS
Switching Characteristic, Inductive Load, at T_j=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
T_j=150°C
V_CC=400V,I_C=20A,
V_GE=0/15V,
R_G= 2.2Ω
L_σ¹⁾ =60nH,
C_σ¹⁾ =40pF
Energy losses include
“tail” and diode
reverse recovery.
T_j=150°C
V_CC=400V,I_C=20A,
V_GE=0/15V,
R_G= 16Ω
L_σ¹⁾ =60nH,
C_σ¹⁾ =40pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
15
8.5
65
35
0.46
0.24
0.7
17
13
222
13
0.6
0.36
0.96
Unit
max.
ns
mJ
ns
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t_rr
T_j=150°C
-
200
t_S
V_R=400V, I_F=20A,
-
25
t_F
di_F/dt=1250A/µs
-
175
Diode reverse recovery charge
Q_rr
-
1500
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t _b
I_rrm
di_rr/dt
-
21
-
410
ns
nC
A
A/µs
1) _{Leakage inductance L σ a nd Stray capacity C σ due to test circuit in Figure E.}
Power Semiconductors
4
Rev. 2.3 Sep 08