SKW20N60HS_08 Datasheet, PDF (11/14 Pages) Infineon Technologies AG – High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation

SKW20N60HS
T_J=-55°C
25°C
150°C
30A
20A
10A
0A
0,0V
0,5V
1,0V
1,5V
V_F, FORWARD VOLTAGE
Figure 25. Typical diode forward current as
a function of forward voltage
2,0V
1,8V
I_F=40A
1,6V
1,4V
I_F=20A
1,2V
I_F=10A
-50°C
0°C
50°C 100°C 150°C
T_J, JUNCTION TEMPERATURE
Figure 26. Typical diode forward voltage as a
function of junction temperature
10⁰K/W ^D=0.5
0.2
0.1
0.05
1 0 ^-1K /W
0.02
0.01
R,(K/W)
0.311
0.271
0.221
0.584
0.314
R1
τ, (s)
7.83*10^-2
1.21*10^-2
1.36*10^-3
1.53*10^-4
2.50*10^-5
R2
single pulse
C1=τ1/R1 C2=τ2/R2
1 0 ^-2K /W
1µs 10µs 100µs 1ms 10ms 100ms
t_P, PULSE WIDTH
Figure 27. Diode transient thermal
impedance as a function of pulse
width
(D=t_P/T)
Power Semiconductors
11
Rev. 2.3 Sep 08