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PTFA211001E Datasheet, PDF (7/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110-2170 MHz
PTFA211001E
Reference Circuit (cont.)
R4 R3 C1 VDD
R5
C3
C5
C4
R6
+
10
35V
C2
R2
LM QQ1
R1
Q1
R7 C6 C7
R8
C8
C9
RF_IN
R9
C10
C11
C19
VDD
C13
C12 C14
C20
C15
C21 C16 C18
C17
VDD
R5
C5
C4
R6 +
R4 R3 C1VDD
C3
LM QQ1
C2
R2
R1
Q1
R7 C6 C7
R8
C8
RF_OUT
A211001ef_dtl
A 2 1 1 0 0 1 e f _ a ssy
Reference circuit assembly diagram* (not to scale)
Component
C1, C2, C3
C4
C5
C6, C12, C16
C7
C8, C10, C11,
C15, C21
C9
C13, C17
C14, C18
C19, C20
Q1
QQ1
R1
R2
R3, R8
R4
R5, R9
R6, R7
Description
Capacitor, 0.001 µF
Tantalum capacitor, 10 µF, 35 V
Capacitor, 0.1 µF
Capacitor, 1 µF
Capacitor, 0.01 µF
Ceramic capacitor, 10 pF
Ceramic capacitor, 0.4 pF
Capacitor, 0.02 µF
Tantalum capacitor, 10 µF, 50 V
Ceramic capacitor, 1.2 pF
Transistor
Voltage regulator
Chip resistor 1.2 k-ohms
Chip resistor 1.3 k-ohms
Chip resistor 2 k-ohms
Potentiometer, 2 k-ohms
Chip resistor 10 ohms
Chip resistor 5.1 k-ohms
Suggested Manufacturer
Digi-Key
Digi-Key
Digi-Key
ATC
Digi-Key
ATC
ATC
Digi-Key
Gerrette Electronics
ATC
Infineon Technologies
National Semiconductor
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
1Gerber Files for this circuit available on our Web site: www.infineon.com/rfpower
Data Sheet
7 of 9
P/N or Comment
PCC1772CT-ND
PCS6106TR-ND
PCC104BCT-ND
920C105
200B 103
100B 100
100B 0R4
200B203
TPS106K050R0400
100B 1R2
BCP56
LM7805
P1.2KGCT-ND
P1.3KGCT-ND
P2KECT-ND
3224W-202ETR-ND
P10ECT-ND
P5.1KECT-ND
Rev. 03, 2008-03-04