PTFA211001E Datasheet, PDF (1/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110-2170 MHz

PTFA211001E
Thermally-Enhanced High Power RF LDMOS FET
100 W, 2110 – 2170 MHz
Description
The PTFA211001E is a thermally-enhanced, 100-watt, internally-
matched GOLDMOS ^® FET intended for WCDMA applications. It is
characaterized for single- and two-carrier WCDMA operation from
2110 to 2170 MHz. Thermally-enhanced packaging provides the
coolest operation available. Full gold metallization ensures excellent
device lifetime and reliability.
PTFA211001E
Package H-30248-2
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 900 mA, ƒ = 2140 MHz, 3GPP WCDMA
signal, 8 dB P/A R, 10 MHz carrier spacing
-28
-31
-34
-37
-40
-43
-46
-49
-52
-55
36
IM3 Up
Ef f iciency
ACPR
38
40
42
44
Average Output Power (dBm)
36
32
28
24
20
16
12
8
4
0
46
RF Characteristics
Features
• Thermally-enhanced package, Pb-free and RoHS-
compliant
• Broadband internal matching
• Typical two-carrier WCDMA performance at 2140
MHz, 28 V
- Average output power = 23 W
- Linear Gain = 16 dB
- Efficiency = 28.5%
- Intermodulation distortion = –37 dBc
- Adjacent channel power = –41 dBc
• Typical CW performance, 2170 MHz, 28 V
- Output power at P–1dB = 125 W
- Efficiency = 57%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
100 W (CW) output power
WCDMA Measurements (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 900 mA, P_OUT = 23 W average
ƒ₁ = 2135 MHz, ƒ₂ = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Unit
Gain
Drain Efficiency
Intermodulation Distortion
G_ps
η_D
IMD
15
16
—
dB
27
28.5
—
%
—
–37
–36
dBc
All published data at T_CASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Rev. 03, 2008-03-04