PTFA211001E Datasheet, PDF (5/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110-2170 MHz

Broadband Circuit Impedance
Z Source
D
Z Load
G
S
Frequency
MHz
2070
2110
2140
2170
2210
Z Source Ω
R
jX
3.02
–2.80
2.96
–2.32
2.89
–2.01
2.84
–1.66
2.85
–1.20
Z Load Ω
R
jX
2.64
1.47
2.57
1.84
2.51
2.10
2.44
2.34
2.40
2.70
See next page for circuit information
PTFA211001E
Z₀ = 50 Ω
Z Load
2210 MHz
2070 MHz
Z Source _{2210 MHz}
2070 MHz
0.1
Data Sheet
5 of 9
Rev. 03, 2008-03-04