PTFA211001E Datasheet, PDF (3/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110-2170 MHz

PTFA211001E
Typical Performance (data taken in a production test fixture)
Two-carrier WCDMA at Various Biases
V_DD = 28 V, ƒ = 2140 MHz, 3GPP WCDMA signal,
P/AR = 8 dB, 10 MHz carrier spacing, series show I_DQ
-30
-35
1.0 A
-40
700 mA
-45
-50
900 mA
800 mA
-55
34 36 38 40 42 44 46
Average Output Power (dBm)
Broadband Performance
V_DD = 28 V, I_DQ = 900 mA, P_OUT = 44.0 dBm
35
-5
30
-10
Efficiency
-15
25
Return Loss
-20
20
-25
15
Gain
-30
10
-35
2070 2090 2110 2130 2150 2170 2190 2210
Frequency (MHz)
Power Sweep, CW Conditions
V_DD = 28 V, I_DQ = 900 mA, ƒ = 2170 MHz
17
60
16
15
14
13
0
50
Gain
40
30
Efficiency
T_CASE = 25°C
T_CASE = 90°C
20 40 60 80 100 120
Output Power (W)
20
10
140
Intermodulation Distortion Products
vs. Tone Spacing
V_DD = 28 V I_DQ = 900 m A, ƒ = 2140 MHz,
P_OUT = 50 dBm PEP
-15
-20
-25
3rd Order
-30
-35
-40
5th
-45
-50
-55
0
7th
5
10
15 20 25 30
Tone Spacing (MHz)
Data Sheet
3 of 9
Rev. 03, 2008-03-04