PTFA211001E Datasheet, PDF (2/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110-2170 MHz

PTFA211001E
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 µA
V_DS = 28 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 28 V, I_DQ = 900 mA
V_GS = 10 V, V_DS = 0 V
Symbol
V_(BR)DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Min
65
—
—
2.0
—
Typ
—
—
0.08
2.5
—
Max
—
1.0
—
3.0
1.0
Unit
V
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 100 W CW)
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_θJC
Value
65
–0.5 to +12
200
417
2.38
–40 to +150
0.42
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type and Version
PTFA211001E V1
Package Outline
H-30248-2
Package Description
Thermally-enhanced slotted flange, single-ended
Marking
PTFA211001E
*See Infineon distributor for future availability.
Data Sheet
2 of 9
Rev. 03, 2008-03-04