PTFA211001E Datasheet, PDF (4/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110-2170 MHz

Typical Performance (cont.)
2-Tone Drive-up
V_DD = 28 V, I_DQ = 900 mA,
ƒ = 2140 MHz, tone spacing = 1 MHz
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
37
Efficiency ^IM3
IM5
IM7
39 41 43 45 47 49
Output Power, PEP (dBm)
50
45
40
35
30
25
20
15
10
5
0
51
PTFA211001E
Single-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 900mA, ƒ = 2140 MHz,
3GPP WCDMA s ignal, TM1 w/16 DPCH, 67% clipping,
P/A R = 8.5 dB, 3.84 MHz BW
-32
50
-36
40
Efficiency
-40
30
ACPR Low
-44
20
-48
10
ACPR Up
-52
0
36 37 38 39 40 41 42 43 44 45 46
Average Output Power (dBm)
IM3, Drain Efficiency and Gain
vs. Supply Voltage
I_DQ = 900 mA, ƒ = 2140 MHz, tone spacing = 1 MHz,
Output Power (PEP) = 50 dBm
-10
50
-15
-20
-25
-30 ^{IM3 Up}
-35
45
Efficiency ₄₀
35
30
25
20
-40
15
Gain
-45
10
23 24 25 26 27 28 29 30 31 32 33
Supply Voltage (V)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.2 A
0.6 A
1.0 A
1.5 A
3.0 A
4.5 A
6.0 A
7.5 A
9.0 A
0
20 40 60 80 100
Case Temperature (°C)
Data Sheet
4 of 9
Rev. 03, 2008-03-04